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APTGL120TA120TPG
Triple phase leg Trench + Field Stop IGBT4 Power module
VBUS1 VBUS2 VBUS3 NTC1 G1 E1 U G2 G4 G3 E3 V G6 G5 E5 W
VCES = 1200V IC = 120A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 1200 140 120 200 20 517 200A @ 1150V Unit V A V W
July, 2009 1-5 APTGL120TA120TPG - Rev 0
R1
E2
E4
E6 NTC2
0/VBUS1
0/VBUS2
0/VBUS3
VBUS 1
VBUS 2
VBUS 3
G1 NTC1 NTC2 0/VBUS 1 E1 E2 G2 0/VBUS 2
G3 E3 E4 G4 0/VBUS 3
G5 E5 E6 G6
U
V
W
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGL120TA120TPG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 100A Tj = 150C VGE = VCE , IC = 3.4mA VGE = 20V, VCE = 0V Min Typ 1.8 2.15 5.8 Max 250 2.15 6.5 600 Unit A V V nA
5.2
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=100A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A RG = 7.5 Inductive Switching (150C) VGE = 15V VBus = 600V IC = 100A RG = 7.5 TJ = 25C VGE = 15V TJ = 150C VBus = 600V IC = 100A TJ = 25C RG = 7.5 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 6.2 0.4 0.35 0.85 130 20 300 45 150 35 350 80 5 10.5 5.5 9.5 400 ns Max Unit nF C
ns
mJ mJ A
Chopper diode ratings and characteristics
Symbol VRRM IRM IF VF trr Qrr Err Characteristic
Maximum Peak Repetitive Reverse Voltage
Test Conditions VR=1200V IF = 100A VGE = 0V Tj = 25C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 1200
Typ
Max 250
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
di/dt =2400A/s
20 3.4 8
mJ
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2-5
APTGL120TA120TPG - Rev 0
IF = 100A VR = 600V
300 9.3
ns C
July, 2009
120 1.9 1.85 155
Unit V A A V
2.4
APTGL120TA120TPG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.29 0.5 175 125 100 5 250 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP6-P Package outline (dimensions in mm)
9 places (3:1)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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3-5
APTGL120TA120TPG - Rev 0
July, 2009
APTGL120TA120TPG
Typical Performance Curve
200 Output Characteristics (VGE=15V) Output Characteristics 200 TJ = 150C 150 IC (A)
TJ=25C TJ=150C VGE=19V VGE=15V
150 IC (A)
100
100
VGE=9V
50
50
0 0 1 2 VCE (V) Transfert Characteristics
TJ=25C
0 3 4 0 1 2 VCE (V) 3 4
200
40
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 7.5 TJ = 150C Eon
150 IC (A) E (mJ)
30
100
TJ=150C
20
Err
Eoff
50
10
0 5 6 7 8 9 10 11 12 13 VGE (V) Switching Energy Losses vs Gate Resistance 20
VCE = 600V VGE =15V IC = 100A TJ = 150C
Eon
0 0 50 100 IC (A) Reverse Bias Safe Operating Area 240 200 160 IC (A)
Eoff
150
200
15 E (mJ)
10
Err
120 80 40
VGE=15V TJ=150C RG=7.5
5
0 0 10 20 30 Gate Resistance (ohms) 40
0 0 300 600 900 VCE (V) 1200 1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W)
0.9
0.25
0.7
IGBT
0.2 0.15 0.1 0.05
0.5 0.3 0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL120TA120TPG - Rev 0
July, 2009
APTGL120TA120TPG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 180 150 120 90 60 30 0 0 25 50 75 IC (A) 100 125 150
Hard switching ZCS ZVS VCE=600V D=50% RG=7.5 TJ=150C Tc=75C
Forward Characteristic of diode 200
150
IF (A)
100
50
TJ=150C TJ=25C
0 0 0.4 0.8 1.2 VF (V) 1.6 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) Diode 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL120TA120TPG - Rev 0
July, 2009

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